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Rom and Toshiba reach an agreement on collaborative manufacturing of power devices

Rom and Toshiba reach an agreement on collaborative manufacturing of power devices

Author:netwing    Time:2023-12-22    Browse:

A cooperation plan between Rom Corporation (hereinafter referred to as "Rom") and Toshiba Electronic Components and Storage Devices Co., Ltd. (hereinafter referred to as "Toshiba") in the manufacturing and production increase of power devices has been recognized by the Japanese Ministry of Economy, Trade and Industry, which strongly supports it as a measure to help achieve the Japanese government's goals of safe and stable semiconductor supply. Rom and Toshiba will respectively invest in enhancing the efficiency of silicon carbide (SiC) and silicon (Si) power devices, effectively enhancing their supply capacity and utilizing each other's production capacity in a complementary manner.
Power devices are important components for the power supply and management of various electronic devices, as well as for achieving carbon free and carbon neutral society. It is expected that the current demand will continue to grow. In the field of automotive applications, with the rapid development of automotive electrification, the development of more efficient and compact electric powertrain is also constantly advancing. In the field of industrial applications, in order to support the growing automation and higher efficiency requirements, the industry generally calls for stable supply and feature improvement of power devices.
In this context, Rom has developed a business vision of "focusing on power and analog solutions to address social issues by meeting customer demands for energy conservation and product miniaturization", and has accelerated efforts to promote decarbonization. SiC power devices are the key to energy conservation. Since the world's first mass production of SiC MOSFETs, Rom has been continuously developing various industry-leading technologies, including Rom's latest 4th generation SiC MOSFET, which will be adopted by numerous electric vehicles and industrial equipment. As one of its priority projects, Rom is committed to developing the SiC business, including continuous active investment to increase SiC production capacity and meet strong demand growth.
Toshiba Group adheres to the long-term basic commitment of "for the future of humanity and the earth", aiming to promote carbon neutrality and circular economy. Toshiba Electronic Components and Storage Devices Co., Ltd. has been providing Si power devices for various markets (mainly automotive and industrial markets), ensuring the launch of energy-saving solutions and the realization of device miniaturization. Last year, Toshiba launched the production of a 300mm wafer production line and is accelerating investment to increase production capacity and meet strong demand growth. In addition, the company fully utilizes its accumulated professional knowledge in the field of rail vehicle applications to promote the development of a wider lineup of SiC power device products, especially for automotive and power transmission and distribution applications.
Rom has announced his participation in Toshiba's privatization process, but this investment did not become the starting point for the two companies to cooperate in the manufacturing sector. Against the backdrop of increasingly fierce international competition in the semiconductor industry, Rom and Toshiba have been considering cooperation on power device business for a period of time, which has led to this joint application.
Rom and Toshiba will collaborate in the manufacturing of power devices through efficiency enhancement investments in SiC and Si power devices, respectively, to enhance the international competitiveness of the two companies. Both sides will also strive to contribute to strengthening the resilience of Japan's semiconductor supply chain.



供应增强计划概要

公司

名称

ROHM Co., Ltd. and LAPIS Semiconductor Co., Ltd.

Toshiba Electronic Devices & Storage Corporation

Kaga Toshiba Electronics Corporation

总投资

金额

3883亿日元:

ROHM和LAPIS:2892亿日元

Toshiba Electronic Devices & Storage和Kaga Toshiba:991亿日元

最高补贴

金额

1294亿日元:总投资额的三分之一

生产

工厂

LAPIS半导体宫崎第二工厂:SiC功率器件和SiC晶圆,

Kaga Toshiba:Si功率器件

范围

加强日本SiC、Si功率器件和SiC晶圆的产能

*The information contained in this document, including product prices and specifications, service content, and contact information, is only valid on the day of the announcement and is subject to change without prior notice.
*Source of this article: Toshiba Semiconductor official account, please contact to delete if there is infringement


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